lh28f640 Sharp Microelectronics of the Americas, lh28f640 Datasheet - Page 22

• Manufacturer Part Number: lh28f640
• Description: 64m X16 Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

1.2.5 AC Characteristics - Write Operations
NOTES:
1. The timing characteristics for reading the status register during block erase, full chip erase, (page buffer) program and
2. A write operation can be initiated and terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Write pulse width (t
5. Write pulse width high (t
6. t
7. Refer to Table 4 for valid address and data for block erase, full chip erase, (page buffer) program, OTP program or lock bit
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
DVWH
AVWH
WHEH
WHDX
WHAX
WHWL
WHGL
WHR0
OTP program operations are the same as during read-only operations. Refer to AC Characteristics for read-only
operations.
CE# or WE# (whichever goes high first). Hence, t
edge of CE# or WE# (whichever goes low last). Hence, t
configuration.
WHR0
Symbol
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
(t
WLEL
PHEL
EHR0
(t
AVEH
EHWH
EHGL
ELEH
DVEH
EHDX
EHAX
EHEL
EHR0
)
)
)
)
)
)
)
)
)
)
)
) after the Read Query or Read Identifier Codes/OTP command=t
Write Cycle Time
RST# High Recovery to WE# (CE#) Going Low
CE# (WE#) Setup to WE# (CE#) Going Low
WE# (CE#) Pulse Width
Data Setup to WE# (CE#) Going High
Address Setup to WE# (CE#) Going High
CE# (WE#) Hold from WE# (CE#) High
Data Hold from WE# (CE#) High
Address Hold from WE# (CE#) High
WE# (CE#) Pulse Width High
Write Recovery before Read
WE# (CE#) High to SR.7 Going "0"
WP
) is defined from the falling edge of CE# or WE# (whichever goes low last) to the rising edge of
WPH
) is defined from the rising edge of CE# or WE# (whichever goes high first) to the falling
V
CC
Parameter
=2.7V-3.6V, T
WP
(1), (2)
LHF64FZ2
=t
WLWH
WPH
A
=t
=t
=0 C to +70 C
WHWL
ELEH
=t
=t
WLEH
EHEL
=t
=t
ELWH
AVQV
WHEL
Notes
3, 6
3
4
4
7
7
5
.
+100ns.
=t
EHWL
.
Min.
150
90
60
40
50
30
30
0
0
0
0
t
AVQV
Max.
50
+
Rev. 2.41
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20