cy8c5588pvi-115es0 Cypress Semiconductor Corporation., cy8c5588pvi-115es0 Datasheet - Page 81

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cy8c5588pvi-115es0

Manufacturer Part Number
cy8c5588pvi-115es0
Description
Cy8c55 Family Data Sheet Programmable System-on-chip Psoc?
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
11.1 Memory
Specifications are valid for –40 °C  T
except where noted.
11.1.1 Flash
Table 11-1. Flash DC Specifications
Table 11-2. Flash AC Specifications
11.1.2 EEPROM
Table 11-3. EEPROM DC Specifications
Table 11-4. EEPROM AC Specifications
11.1.3 Nonvolatile Latches (NVL)
Table 11-5. NVL DC Specifications
Document Number: 001-44094 Rev. *J
T
T
T
T
Parameter
Parameter
Parameter
Parameter
Parameter
WRITE
ERASE
BULK
WRITE
Row write time (erase + program)
Row erase time
Row program time
Bulk erase time (256 KB)
Sector erase time (16 KB)
Total device program time 
(including JTAG, and so on)
Flash endurance
Flash data retention time
Erase and program voltage
Single byte erase/write cycle time
EEPROM endurance
EEPROM data retention time
Erase and program voltage
Erase and program voltage
Description
Description
Description
Description
Description
A
 85 °C and T
PRELIMINARY
V
J
Retention period measured from
last erase cycle
Retention period measured from
last erase cycle (up to 100 K cycles)
V
DDD
 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
DDD
pin
pin
Conditions
Conditions
Conditions
Conditions
Conditions
PSoC
®
5: CY8C55 Family Datasheet
1.71
100k
Min
Min
1.71
1.71
Min
Min
Min
20
1M
20
Typ
Typ
Typ
Typ
Typ
2
Max
Max
Max
Max
Max
5.5
5.5
5.5
15
10
80
15
15
5
5
Page 81 of 102
program/
seconds
program/
cycles
Units
Units
erase
cycles
years
Units
Units
erase
years
Units
ms
ms
ms
ms
ms
ms
V
V
V
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