74hct2g34gw NXP Semiconductors, 74hct2g34gw Datasheet - Page 7

• Manufacturer Part Number: 74hct2g34gw
• Description: 74hc2g34; 74hct2g34 Dual Buffer Gate
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 8.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
11. Dynamic characteristics
Table 9.
Voltages are referenced to GND (ground = 0 V); for test circuit see
74HC_HCT2G34_1
Product data sheet
Symbol
T
V
V
V
V
I
I
Symbol
74HC2G34
t
t
C
I
CC
pd
t
amb
I
IH
IL
OH
OL
PD
CC
= 40 C to +125 C
Parameter
propagation delay
transition time
power dissipation
capacitance
Static characteristics for 74HCT2G34
Dynamic characteristics
Parameter
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
LOW-level output voltage
input leakage current
supply current
additional supply current
Conditions
nA to nY; see
V
V
V
nY; see
V
V
V
V
CC
CC
CC
CC
CC
CC
I
= GND to V
= 2.0 V; C
= 4.5 V; C
= 6.0 V; C
= 2.0 V; C
= 4.5 V; C
= 6.0 V; C
Figure 5
Conditions
V
V
V
V
V
V
V
V
V
CC
CC
I
I
I
I
CC
I
CC
I
I
I
I
= V
= V
= GND or V
= GND or V
= V
O
O
O
O
Figure 5
CC
= 4.5 V to 5.5 V
= 4.5 V to 5.5 V
= 5.5 V
= 4.5 V to 5.5 V; I
L
L
L
L
L
L
= 20 A; V
= 4.0 mA; V
= 20 A; V
= 4.0 mA; V
Rev. 01 — 6 October 2006
IH
IH
CC
= 50 pF
= 50 pF
= 50 pF
= 50 pF
= 50 pF
= 50 pF
…continued
or V
or V
2.1 V;
IL
IL
CC
CC
CC
CC
CC
; V
; I
CC
= 4.5 V
O
CC
= 4.5 V
= 4.5 V
= 0 A;
[1]
[2]
[3]
= 4.5 V
O
Figure
= 5.5 V
74HC2G34; 74HCT2G34
= 0 A
Min
-
-
-
-
-
-
-
6.
25 C
Typ
29
18
10
9
8
6
5
Max
Min
2.0
-
4.4
3.7
-
-
-
-
-
75
15
13
75
15
13
-
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
40 C to +125 C
(85 C)
Max
95
19
16
95
19
16
-
© NXP B.V. 2006. All rights reserved.
Dual buffer gate
Max
-
0.8
-
-
0.1
0.4
20.0
410
1.0
(125 C)
Max
125
125
25
20
25
20
-
Unit
V
V
V
V
V
V
7 of 14
A
A
A
Unit
ns
ns
ns
ns
ns
ns
pF