ap4920gm APEC, ap4920gm Datasheet - Page 2

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ap4920gm

Manufacturer Part Number
ap4920gm
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
APEC
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4920GM
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
ap4920gm-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
V
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
Electrical Characteristics@T
Source-Drain Diode
Notes:
AP4920GM
DSS
GSS
d(on)
r
d(off)
f
S
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current ( Body Diode )
Forward On Voltage
2
copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
j
j
=70
=25
o
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
D
D
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
D
j
G
D
=7A
=1A
=25℃, I
=V
=15Ω
=6Ω,V
=0V, I
=10V, I
=4.5V, I
=V
=10V, I
=25V, V
=20V, V
=+20V
=15V
=4.5V
=15V
=0V
=25V
G
GS
=0V , V
Test Conditions
Test Conditions
, I
D
GS
S
D
=250uA
D
=2.1A, V
D
D
=250uA
GS
GS
=10V
=7A
=7A
=5.2A
=0V
=0V
S
=1.2V
GS
D
=1mA
=0V
Min. Typ. Max. Units
Min. Typ. Max. Units
25
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.037
10.5
13.5
395
260
105
1.9
7.5
9.5
14
25
8
-
-
-
-
-
-
-
-
-
+100 nA
1.67
1.2
25
35
25
3
1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
V
S
A
V
2

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