upc1652g Renesas Electronics Corporation., upc1652g Datasheet

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upc1652g

Manufacturer Part Number
upc1652g
Description
Silicon Monolithic Bipolar Integrated Circuit Wide Band Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPC1652G.pdf (8 pages)

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Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
UPC1652G
Manufacturer:
NEC
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
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Quantity:
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Document No. P12443EJ5V0DS00 (5th edition)
Date Published November 1999 N CP(K)
Printed in Japan
IN
DESCRIPTION
especially designed as a wide band amplifier convering HF band
through UHF band.
FEATURES
• Excellent frequency response : 1 200 MHz TYP. @ 3 dB down
• High power gain : 18 dB TYP. @ f = 500 MHz
• Low voltage operation : V
• SOP package
ABSOLUTE MAXIMUM RATINGS (T
EQUIVALENT CIRCUIT
NEC cannot assume any responsibility for any circuits shown or represent that
they are free from patent infringement
The
Supply Voltage
Total Power dissipation
Operating Ambient Temperature
Storage Temperature
PC1652G is a silicon monolithic integrated circuit
SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
CC
V
OUT
GND
= 5 V
CC
BIPOLAR ANALOG INTEGRATED CIRCUIT
WIDE BAND AMPLIFIER
V
P
T
T
Circuit Current
Power Gain
Noise Figure
Band Width
Isolation
Input Return Loss
Output Return Loss
Maximum Output Level
A
stg
CC
D
ELECTRICAL CHARACTERISTICS (T
The mark
CHARACTERISTIC
DATA SHEET
DATA SHEET
A
= +25 C)
40 to +125
20 to +75
440
7
shows major revised points.
SYMBOL MIN. TYP. MAX. UNIT
mW
V
C
C
BW
NF
S
S
I
G
I
P
CC
SO
11
22
O
P
1000 1200
15
16
23
17
12
INPUT
3
GND
GND
GND
5.5
20
18
26
20
15
5
PIN CONNECTIONS
1
2
3
4
6.5
25
20
A
= +25 C, V
PC1652G
MHz 3 dB down below flat gain
dBm f = 500 MHz
mA
dB
dB
dB
dB
dB
No signals
f = 500 MHz
f = 500 MHz
f = 500 MHz
f = 500 MHz
f = 500 MHz
TEST CONDITIONS
©
CC
= 5 V)
8
7
6
5
GND
V
V
OUTPUT
CC
CC
1983, 1999

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upc1652g Summary of contents

Page 1

SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT DESCRIPTION The PC1652G is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band through UHF band. FEATURES • Excellent frequency response : 1 200 MHz TYP ...

Page 2

TYPICAL CHARACTERISTICS (T A CIRCUIT CURRENT vs. SUPPLY VOLTAGE -Supply Voltage-V CC NOISE FIGURE AND POWER GAIN vs. FREQUENCY ...

Page 3

PACKAGE DIMENSIONS 8 PIN PLASTIC SOP (225 mil) (UNIT: mm 5.2 0.2 1.57 0.2 1.49 1.27 +0.08 0.42 –0.07 0.1 0.1 Each lead centerline is located within 0. its true position (T.P.) at maximum material condition. ...

Page 4

NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to keep minimum ground impedance (to prevent undesired oscillation). (3) Keep the track length of the ground ...

Page 5

Data Sheet P12443EJ5V0DS00 PC1652G 5 ...

Page 6

Data Sheet P12443EJ5V0DS00 PC1652G ...

Page 7

Data Sheet P12443EJ5V0DS00 PC1652G 7 ...

Page 8

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means ...

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