sg23n06dt Sirectifier Semiconductors, sg23n06dt Datasheet - Page 2

• Manufacturer Part Number: sg23n06dt
• Description: Discrete Igbts
• Manufacturer: Sirectifier Semiconductors

Reverse Diode (FRED)
Symbol
Symbol
R
R
C
t
C
R
C
t
t
t
Q
Q
E
E
E
I
d(off)
d(on)
d(on)
d(off)
thCK
g
Q
thJC
V
RM
oes
t
t
t
t
t
thJC
ies
res
off
on
off
ge
gc
ts
ri
fi
ri
fi
rr
F
g
I
Pulse test, t 300us, duty cycle 2%
V
I
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
I
Pulse test, t 300us, duty cycle 2%;
I
V
I
C
C
C
C
F
F
F
CE
CE
CE
R
=I
=I
=I
=I
=I
=I
=1A; -di/dt=100A/us; V
=100V; T
C90
C90
C90
=25V; V
C90
C90
=0.8V
C90
=0.8V
CE
CE
; V
; V
; V
; V
; V
; V
(Clamp)
(Clamp)
GE
GE
CE
GE
GE
GE
CES
CES
SG23N06T, SG23N06DT
=10V
=15V; V
=15V; L=100uH
=15V; L=100uH
=0V;T
=0V; -di
GE
J
G
G
=100
; R
; R
=0V; f=1MHz
G
G
J
J
=R
=R
=25
=125
Test Conditions
Test Conditions
J
o
0.8V
0.8V
=150
C
F
CE
off
off
/dt=100A/us
o
=10
=10
=0.5V
C
o
CES'
CES'
C
o
C
R
=30V; T
higher T
higher T
CES
Discrete IGBTs
J
=25
J
J
or
or
o
T
C
J
=25
o
C
min.
min.
9
Characteristic Values
Characteristic Values
(T
(T
J
J
=25
=25
o
o
1500
0.24
0.15
0.25
C , unless otherwise specified)
120
C , unless otherwise specified)
typ.
130
110
typ.
100
0.6
75
60
17
40
55
13
17
15
25
15
25
25
6
max.
max.
0.36
1.6
2.5
140
110
0.83
0.9
K/W
K/W
K/W
Unit
Unit
mJ
mJ
mJ
nC
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
A