sg50n06d3s Sirectifier Semiconductors, sg50n06d3s Datasheet
sg50n06d3s
Manufacturer Part Number
sg50n06d3s
Description
Discrete Igbts
Manufacturer
Sirectifier Semiconductors
Datasheet
1.SG50N06D3S.pdf
(2 pages)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
BV
V
V
I
I
Symbol
GE(th)
CES
GES
CE(sat)
(RBSOA)
SG50N06D2S
CES
Weight
V
V
V
V
SSOA
V
I
I
I
I
FAVM
FRM
I
RRM
GES
C25
C90
CES
CGR
GEM
P
P
T
T
CM
T
M
JM
stg
C
D
J
d
I
I
V
V
V
I
C
C
C
CE
GE
CE
=250uA; V
=250uA; V
=I
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load; L=30uH
T
T
t
T
Mounting torque
Terminal connection torque(M4)
=0.8V
=0V;
=0V; V
C90
SG50N06D2S, SG50N06D3S
p
J
J
C
C
C
C
C
C
GE
=25
=25
=25
=90
=25
=25
=70
=25
; V
10ms; pulse width limited by T
=15V; T
GE
o
o
CES
o
o
o
o
o
o
C to 150
C to 150
C
C
C ; 1 ms
C
C ; rectangular; d=50%
C
SG50N06D3S
GE
=15V
GE
CE
;
=±20V
=V
=0V
VJ
T
T
=125
Test Conditions
GE
J
J
=25
=125
o
o
C
C ; R
o
o
C ; R
C
o
GE
C
Test Conditions
=1M
G
Discrete IGBTs
=10
Dimensions SOT-227(ISOTOP)
J
min.
600
2.5
Characteristic Values
(T
J
=25
Maximum Ratings
o
C , unless otherwise specified)
typ.
@ 0.8V
-40…+150
-40…+150
I
CM
1.5/13
1.5/13
600
600
±20
±30
200
250
600
600
150
300
150
=100
75
50
60
30
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
CES
max.
±100
200
31.50
14.91
30.12
37.80
11.68
12.60
25.15
26.54
24.59
0.780
5.0
2.5
-0.05
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
3.30
Min.
1
Millimeter
31.88
15.11
30.30
38.20
12.22
12.85
25.42
26.90
25.07
0.830
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
4.57
0.1
Nm/Ib.in.
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
0.130
19.81
Min.
Unit
Unit
mA
uA
nA
W
W
o
V
V
A
A
V
A
A
A
g
V
V
V
Inches
C
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
Max.
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sg50n06d3s Summary of contents
Page 1
... SG50N06D2S, SG50N06D3S SG50N06D2S SG50N06D3S Symbol = 150 C CES = 150 CGR J V Continuous GES V Transient GEM =25 C C25 =90 C C90 = SSOA V =15V; T =125 GE VJ (RBSOA) Clamped inductive load; L=30uH ...
Page 2
... SG50N06D2S, SG50N06D3S Symbol Test Conditions =10V ts C C90 CE Pulse test, t 300us, duty cycle 2% C ies C V =25V; V =0V; f=1MHz oes res =15V C90 Inductive load, T =25 d(on =15V; L=100uH ri C C90 ...