bd799 Inchange Semiconductor Company, bd799 Datasheet
bd799
Manufacturer Part Number
bd799
Description
Isc Silicon Npn Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.BD799.pdf
(2 pages)
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INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
·Low Saturation Voltage
·Complement to Type BD800
APPLICATIONS
·Designed for a wide variety of medium-power switching and
ABSOLUTE MAXIMUM RATINGS(T
THERMAL CHARACTERISTICS
isc Website：www.iscsemi.cn
SYMBOL
SYMBOL
: V
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
V
V
V
R
T
P
CBO
CEO
I
T
EBO
I
th j-c
stg
CEO(SUS)
C
B
C
Silicon NPN Power Transistor
j
B
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
T
Junction Temperature
Storage Ttemperature Range
Thermal Resistance,Junction to Case
= 80V(Min)
C
=25℃
PARAMETER
PARAMETER
a
=25
℃
)
-55~150
VALUE
150
80
80
65
MAX
5
8
3
1.92
UNIT
UNIT
℃/W
℃
℃
W
V
V
V
A
A
isc
Product Specification
BD799
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bd799 Summary of contents
Page 1
... =25℃ Junction Temperature j Storage Ttemperature Range T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case R th j-c isc Website：www.iscsemi.cn =25 ℃ VALUE UNIT ℃ 150 ℃ -55~150 MAX UNIT ℃/W 1.92 isc Product Specification BD799 ...
Page 2
... Product Specification CONDITIONS I = 100mA 3A 0. 80V 5V 0.25A ;V = 10V,f = 1MHz test C CE BD799 MIN TYP. MAX UNIT 1 MHz ...