MJ423 Inchange Semiconductor Company, MJ423 Datasheet

MJ423

Manufacturer Part Number

MJ423

Description

Isc Silicon Npn Power Transistor

Manufacturer

Inchange Semiconductor Company

Datasheet

1.MJ423.pdf (2 pages)

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INCHANGE Semiconductor

isc

DESCRIPTION

·High Collector-Emitter Sustaining Voltage-

·DC Current Gain-

APPLICATIONS

·Designed for medium to high voltage inverters, converters,

ABSOLUTE MAXIMUM RATINGS(T

THERMAL CHARACTERISTICS

isc Website：www.iscsemi.cn

SYMBOL

: V

: h

regulators and switching circuits.

CBO

CEX

EBO

th j-c

CEO(SUS)

stg

Silicon NPN Power Transistor

= 30-90@ I

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current-Continuous

Collector Power Dissipation@T

Junction Temperature

Storage Temperature Range

= 325V(Min.)

Thermal Resistance,Junction to Case

= 1A

PARAMETER

=25

=25℃

℃)

-65~200

VALUE

MAX

400

125

150

1.0

UNIT

℃/W

℃

isc

Product Specification

MJ423

Related parts for MJ423

MJ423 Summary of contents

Page 1

... C T Junction Temperature J Storage Temperature Range T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case R th j-c isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 400 V 400 =25℃ 125 W C ℃ 150 ℃ -65~200 MAX UNIT ℃/W 1.0 isc Product Specification MJ423 ...

Page 2

... Product Specification CONDITIONS I = 100mA 400V;V =1.5V CE EB(off 400V;V =1.5V;T =125℃ CE EB(off 5V 1A 2.5A 0.2A; V =10V; f=1.0MHz C CE MJ423 MIN TYP MAX UNIT 325 V 0.8 V 1.25 V 0.25 mA 0.5 5 2.5 MHz ...

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