si4532ady Vishay, si4532ady Datasheet - Page 6

• Manufacturer Part Number: si4532ady
• Description: N- And P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si4532ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
10
30
10
8
6
4
2
0
1
- 50
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
- 25
= 3.9 A
= 10 V
0.3
2
V
SD
0
Q
g
Threshold Voltage
- Source-to-Drain Voltage (V)
T
- Total Gate Charge (nC)
J
Gate Charge
25
- Temperature (°C)
0.6
4
T
J
= 150 °C
50
I
D
0.9
= 250 µA
6
75
T
J
= 25 °C
100
1.2
8
125
150
1.5
10
0.40
0.32
0.24
0.16
0.08
0.00
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
24
18
12
6
0
10
- 50
0
-2
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
V
I
D
- 25
GS
= 3.9 A
= 10 V
2
V
10
T
0
GS
J
-1
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
Time (s)
S09-0393-Rev. C, 09-Mar-09
50
I
D
1
Document Number: 71133
= 3.9 A
6
75
100
10
8
125
150
100
10