si4532ady Vishay, si4532ady Datasheet

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si4532ady

Manufacturer Part Number
si4532ady
Description
N- And P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71133
S09-0393-Rev. C, 09-Mar-09
Ordering Information: Si4532ADY-T1-E3 (Lead (Pb-free)
PRODUCT SUMMARY
N-Channel
P-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
G
G
S
S
V
1
1
2
2
DS
- 30
30
Si4532ADY-T1-GE3 (Lead (Pb-free and Halogen-free)
(V)
1
2
3
4
Top View
J
a
0.135 at V
SO-8
N- and P-Channel 30-V (D-S) MOSFET
0.080 at V
0.075 at V
0.053 at V
= 150 °C)
a
R
DS(on)
GS
GS
a
GS
GS
8
7
6
5
= - 4.5 V
(Ω)
= - 10 V
= 4.5 V
= 10 V
D
D
D
D
1
1
2
2
Steady State
Steady State
a
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
= 25 °C, unless otherwise noted
I
D
- 3.9
- 3.0
4.9
4.1
(A)
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
I
I
thJA
thJF
DS
GS
D
S
D
stg
FEATURES
• Halogen-free According to IEC 61249-2-21
G
Available
TrenchFET
1
10 s
4.9
3.9
1.7
1.3
Typ.
2
55
90
40
N-Channel MOSFET
N-Channel
N-Channel
± 20
30
Steady State
D
S
®
1
1
Power MOSFETs
0.94
1.13
0.73
Max.
3.7
2.9
62.5
110
50
- 55 to 150
20
G
2
10 s
- 3.9
- 3.1
- 1.7
1.3
Typ.
2
P-Channel MOSFET
54
87
34
P-Channel
P-Channel
Vishay Siliconix
± 20
- 30
Steady State
S
D
Si4532ADY
2
2
- 3.0
- 2.4
- 1.0
0.76
1.2
Max.
62.5
105
45
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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si4532ady Summary of contents

Page 1

... Top View Ordering Information: Si4532ADY-T1-E3 (Lead (Pb-free) Si4532ADY-T1-GE3 (Lead (Pb-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si4532ADY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71133 S09-0393-Rev. C, 09-Mar- 2.5 3.0 3.5 4 Si4532ADY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 600 500 C iss ...

Page 4

... Si4532ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 I 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com °C J 0.8 1.0 1.2 1.4 = 250 µA ...

Page 5

... Drain Current (A) D On-Resistance vs. Drain Current Document Number: 71133 S09-0393-Rev. C, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4532ADY Vishay Siliconix - ° ° ...

Page 6

... Si4532ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3 Total Gate Charge (nC) g Gate Charge 150 ° 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.6 0.4 0.2 0.0 - 0 Temperature (°C) ...

Page 7

... Document Number: 71133 S09-0393-Rev. C, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4532ADY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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