mrf6s9160h Freescale Semiconductor, Inc, mrf6s9160h Datasheet - Page 3

• Manufacturer Part Number: mrf6s9160h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V
P
Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) V
921 MHz<Frequency<960 MHz
out
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Drain Efficiency
Input Return Loss
P
out
(f = 940 MHz)
= 76 W Avg., 865 MHz<Frequency<895 MHz
@ 1 dB Compression Point, CW
Characteristic
(T
C
= 25°C unless otherwise noted)
(continued)
Symbol
DD
P1dB
EVM
SR1
SR2
G
G
IRL
η
η
= 28 Vdc, I
ps
ps
D
D
DQ
Min
DD
—
—
—
—
—
—
—
—
—
= 1200 mA, P
= 28 Vdc, I
MRF6S9160HR3 MRF6S9160HSR3
Typ
160
- 66
- 75
- 12
20
45
20
58
DQ
2
out
= 1200 mA,
= 160 W,
Max
—
—
—
—
—
—
—
—
—
% rms
Unit
dBc
dBc
dB
dB
dB
W
%
%
3