mrf6s9160h Freescale Semiconductor, Inc, mrf6s9160h Datasheet - Page 2

• Manufacturer Part Number: mrf6s9160h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

2
MRF6S9160HR3 MRF6S9160HSR3
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
3. Part is internally matched on input.
Case Temperature 81°C, 160 W CW
Case Temperature 73°C, 35 W CW
(V
(V
(V
(V
(V
(V
(V
(V
(V
access the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DS
GS
DS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
D
GS
GS
= 525 μAdc)
= 1200 mAdc, Measured in Functional Test)
= 3.6 Adc)
= 8 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(3)
Characteristic
Test Methodology
Characteristic
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
V
V
ACPR
I
I
I
DS(on)
C
C
GS(th)
GS(Q)
G
GSS
= 1200 mA, P
IRL
DSS
DSS
g
η
oss
rss
fs
ps
D
Symbol
R
θJC
Min
0.1
out
—
—
—
—
—
—
20
29
—
—
1
2
= 35 W Avg. N - CDMA,
- 46.8
80.2
20.9
30.5
1A (Minimum)
Typ
IV (Minimum)
- 17
0.2
9.7
2.2
A (Minimum)
—
—
—
2
3
Value
Class
0.31
0.33
Freescale Semiconductor
(1,2)
Max
0.3
- 45
10
23
—
—
—
—
- 9
1
1
3
4
RF Device Data
(continued)
°C/W
Unit
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
pF
pF
%
S