psmg150-01 Power Semiconductors, Inc., psmg150-01 Datasheet - Page 2

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psmg150-01

Manufacturer Part Number
psmg150-01
Description
Power Mosfet
Manufacturer
Power Semiconductors, Inc.
Datasheet
Temperature Sensor NTC
Symbol
R
B
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note:
Module
Symbol
T
T
V
M
a
Symbol
d
d
Weight
S
RM
25
25/50
SM
rr
VJ
stg
S
A
SD
ISOL
RM
d
1)
2)
Pulse width limited by T
Pulse test, t
Conditions
T = 25°C
Test Conditions
V
Repetitive;
pulse width limited by T
I
I
Conditions
I
Mounting torque (M4)
Max. allowable acceleration
Conditions
Creepage distance on surface
Strike distance in air
F
F
ISOL
GS
= 100A, V
= 50A,-di/dt = 100 A/µs, V
= 0 V
1 mA; 50/60 Hz; t = 1 s
300 µs, duty cycle d
GS
= 0 V,
JM
1)
(Pin to heatsink)
JM
R
2 %
(T
= 100 V
J
(Pin to heatsink)
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
= 25°C, unless otherwise specified)
Characteristic Values
4.75
min.
min.
min.
11.2
11.2
Characteristic Values
Characteristic Values
-40...+150
-40...+125
3375
Maximum Ratings
1.5 - 2.0
typ.
typ.
5.0
14 - 18
1.1
13
typ. max.
24
3600
50
max.
max.
5.25 k
180
720
250
1.5
lb.in.
m/s
m m
m m
N m
K
µC
n s
°C
°C
V~
A
A
A
V
g
2
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSMG 150/01

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