psmg150-01 Power Semiconductors, Inc., psmg150-01 Datasheet
psmg150-01
Manufacturer Part Number
psmg150-01
Description
Power Mosfet
Manufacturer
Power Semiconductors, Inc.
Datasheet
1.PSMG150-01.pdf
(4 pages)
MOSFET
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
Preliminary Data Sheet
Symbol
V
V
I
I
R
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
D25
D(RMS)
DM
AR
GSS
DSS
d(on)
d(off)
f
r
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
AR
AS
DSS
DGR
GS
GSM
D
fs
GS(th)
Power MOSFET
in ECO-PAC 2
Single MOSFET Die
DSS
DS(on)
iss
oss
rss
g(on)
gd
thJC
thCK
gs
Test Conditions
T
T
Continuous
Transient
T
External lead (current limit)
T
T
T
T
I
T
T
Test Conditions
V
V
V
V
V
V
V
V
V
R
V
with heatsink compound (0.42 K/m.K; 50 µm)
S
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
DS
GS
GS
GS
G
= 25°C to 150°C; R
= 25°C to 150°C
= 25°C (MOSFET chip capability)
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 1
I
= 0 V, I
= V
= 0 V, V
= 10 V, V
= 10 V, V
DM
150°C, R
= 0 V; T
= 10 V, I
= 10 V; I
= ±20 V, V
= V
, di/dt
GS
DSS
, I
(External)
D
D
; T
1)
DS
= 3 mA
= 8 mA
D
D
J
DS
DS
J
G
= 25 V, f = 1 MHz
= 90 A
= 90 A
100 A/µs, V
= 125°C
DS
= 25°C
= 2
= 0.5 • V
= 0.5 • V
= 0
1)
2)
GS
DSS
DSS
= 1 M
DD
, I
, I
D
D
PSMG 150/01*
(T
= 90 A
= 90 A
V
J
DSS
= 25°C, unless otherwise specified)
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
I K10/11
K13
X18
100
min.
2.0
60
Characteristic Values
A1
Maximum Ratings
9400
3200
1660
typ.
140
400
220
0.2
90
50
90
65
65
L N 8/9
100
100
±20
±30
165
720
180
400
76
60
3
5
±100
K15
max.
0.30
100
4.0
2
8
V/ns
K/W
K/W
m
mA
mJ
nC
nC
nC
nA
µA
pF
pF
pF
n s
n s
n s
n s
*NTC optional
W
V
I
R
t
S
V
V
V
V
A
A
A
A
J
V
V
D25
rr
DSS
DS(on)
Caution: These Devices are sensitive
to electrostatic discharge. Users
should observe proper ESD handling
precautions.
Features
• Silicon chip on Direct-Copper-Bond
• Low drain to tab capacitance(< 25pF)
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Fast intrinsic Rectifier
• UL certified, E 148688
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
substrate
- High power dissipation
- Isolated mounting surface
- 3000V electrical isolation
rated
power supplies
= 100 V
= 165 A
= 8 m
< 250 ns
DS (on)
ECO-PAC
HDMOS
TM
process
TM
2
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psmg150-01 Summary of contents
Page 1
Power MOSFET in ECO-PAC 2 Single MOSFET Die Preliminary Data Sheet MOSFET Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V Transient GSM I T ...
Page 2
Source-Drain Diode Symbol Test Conditions Repetitive; SM pulse width limited 100A 50A,-di/dt = 100 ...
Page 3
V =10V T = 150 100 50 0 0.0 0.5 1 Volts DS Figure 1. Output Characteristics 10V 125 J 1.6 1.4 1.2 ...
Page 4
V =50V =90A D I =10mA 100 150 200 250 300 350 400 Gate Charge - nC Figure 7. Gate Charge 200 175 150 125 ...