ipp096n03lg Infineon Technologies Corporation, ipp096n03lg Datasheet - Page 6

• Manufacturer Part Number: ipp096n03lg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.01
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
18
16
14
12
10
DS
=f(T
8
6
4
2
0
4
3
2
1
0
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=30 A; V
98 %
20
10
GS
=10 V
T
V
j
DS
60
[°C]
typ
Ciss
Coss
[V]
Crss
100
20
140
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
j
GS
-20
=V
0.5
175 °C
DS
20
; I
D
=250 µA
V
T
SD
j
1.0
60
[°C]
[V]
100
IPB096N03L G
IPP096N03L G
1.5
175 °C, 98%
140
25 °C
25 °C, 98%
2007-08-07
180
2.0