ipp096n03lg Infineon Technologies Corporation, ipp096n03lg Datasheet
ipp096n03lg
Available stocks
Related parts for ipp096n03lg
ipp096n03lg Summary of contents
Page 1
Type OptiMOS ® 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...
Page 2
Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
Page 4
Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited by on-state ...
Page 5
Typ. output characteristics I =f =25 ° parameter 160 10 V 120 Typ. transfer characteristics I =f |>2 ...
Page 6
Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...
Page 7
Avalanche characteristics parameter: T j(start) 100 10 150 ° Drain-source breakdown voltage V =f BR(DSS ...
Page 8
Package Outline Footprint: Rev. 1.01 PG-TO220-3-1 Packaging: page 8 IPP096N03L G IPB096N03L G 2007-08-07 ...
Page 9
Package Outline Rev. 1.01 PG-TO263-3 page 9 IPP096N03L G IPB096N03L G 2007-08-07 ...
Page 10
Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With ...