ipp015n04ng Infineon Technologies Corporation, ipp015n04ng Datasheet - Page 7

• Manufacturer Part Number: ipp015n04ng
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
1000
100
10
45
40
35
30
25
20
AV
1
10
-60
=f(T
); R
-1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
10
0
20
t
T
AV
j
10
60
[°C]
[µs]
1
100
100 °C
150 °C
10
2
140
25 °C
180
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=100 A pulsed
g s
50
Q
Q
gate
g
100
Q
[nC]
sw
Q
g d
IPB015N04N G
IPP015N04N G
150
8 V
32 V
Q
20 V
g ate
2008-04-10
200