ipp015n04ng Infineon Technologies Corporation, ipp015n04ng Datasheet - Page 6

• Manufacturer Part Number: ipp015n04ng
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
2.5
1.5
0.5
10
10
10
10
10
DS
=f(T
3
2
1
0
5
4
3
2
1
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=100 A; V
98 %
20
10
GS
V
T
=10 V
DS
j
60
[°C]
typ
Coss
Ciss
[V]
Crss
100
20
140
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
10
=f(T
SD
5
4
3
2
1
0
1
-60
0.0
)
j
); V
j
GS
-20
=V
175 °C
0.5
DS
20
; I
D
25 °C
=1mA
V
T
SD
j
1.0
60
[°C]
[V]
100
IPB015N04N G
IPP015N04N G
25 °C, 98%
1.5
175 °C, 98%
140
2008-04-10
180
2.0