MX29LV800AB Macronix, MX29LV800AB Datasheet

MX29LV800AB

Manufacturer Part Number

MX29LV800AB

Description

8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

Manufacturer

Macronix

Datasheet

1.MX29LV800AB.pdf (67 pages)

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FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 1,048,576 x 8/524,288 x 16 switchable

• Single power supply operation

• Fast access time: 70/90ns

• Low power consumption

• Command register architecture

• Auto Erase (chip & sector) and Auto Program

• Erase suspend/Erase Resume

• Status Reply

GENERAL DESCRIPTION

The MX29LV800T/B & MX29LV800AT/AB is a 8-mega

bit Flash memory organized as 1M bytes of 8 bits or

512K words of 16 bits. MXIC's Flash memories offer

the most cost-effective and reliable read/write non-vola-

tile random access memory. The MX29LV800T/B &

MX29LV800AT/AB is packaged in 44-pin SOP, 48-pin

TSOP, and 48-ball CSP. It is designed to be repro-

grammed and erased in system or in standard EPROM

programmers.

The standard MX29LV800T/B & MX29LV800AT/AB of-

fers access time as fast as 70ns, allowing operation of

high-speed microprocessors without wait states. To elimi-

nate bus contention, the MX29LV800T/B &

MX29LV800AT/AB has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV800T/B & MX29LV800AT/AB uses a command

P/N:PM0709

- 3.0V only operation for read, erase and program

operation

- 20mA maximum active current

- 0.2uA typical standby current

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

- Suspends sector erase operation to read data from,

or program data to, any sector that is not being erased,

then resumes the erase.

- Data polling & Toggle bit for detection of program and

erase operation completion.

MX29LV800T/B & MX29LV800AT/AB

8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE

• Ready/Busy pin (RY/BY)

• Sector protection

• CFI (Common Flash Interface) compliant (for

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

• Package type:

• Compatibility with JEDEC standard

• 20 years data retention

ister allows for 100% TTL level control inputs and fixed

power supply levels during erase and programming, while

maintaining maximum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV800T/B & MX29LV800AT/AB uses a

2.7V~3.6V VCC supply to perform the High Reliability

Erase and auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamperes on

address and data pin from -1V to VCC + 1V.

Part Name

MX29LV800T/B

MX29LV800AT/AB 1.With CFI compliant

- Provides a hardware method of detecting program or

erase operation completion.

- Hardware method to disable any combination of

sectors from program or erase operations

- Temporary sector unprotected allows code changes

in previously locked sectors.

MX29LV800AT/AB)

- Flash device parameters stored on the device and

provide the host system to access

- T = Top Boot Sector

- B = Bottom Boot Sector

- 44-pin SOP

- 48-pin TSOP

- 48-pin CSP (8x9mm for MX29LV800T/B; 6x8mm for

MX29LV800AT/AB)

- Pinout and software compatible with single-power

supply Flash

3V ONLY FLASH MEMORY

Difference

1.Without CFI compliant

2. CSP dimension:8x9mm

2. CSP dimension:6x8mm

REV. 2.5, DEC. 23, 2003

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