VTB5051B PerkinElmer Optoelectronics, VTB5051B Datasheet

VTB5051B

Manufacturer Part Number

VTB5051B

Description

VTB Process Photodiodes

Manufacturer

PerkinElmer Optoelectronics

Datasheet

1.VTB5051B.pdf (1 pages)

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PRODUCT DESCRIPTION

Planar silicon photodiode in a “flat” window, dual

lead TO-5 package. The package incorporates

an infrared rejection filter. Cathode is common to

the case. These diodes have very high shunt

resistance and have good blue response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

SYMBOL

VTB Process Photodiodes

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

TC V

TC R

TC I

NEP

range

1/2

Short Circuit Current

Open Circuit Voltage

Dark Current

Shunt Resistance

Junction Capacitance

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

Temperature Coefficient

CHARACTERISTIC

H = 100 fc, 2850 K

2850 K

H = 100 fc, 2850 K

2850 K

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

TEST CONDITIONS

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

(See also VTB curves, pages 21-22)

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

Min.

330

CHIP ACTIVE AREA: .023 in

CASE 14 TO-5 HERMETIC

3.7 x 10

1.0 x 10

VTB5051B

inch (mm)

Typ.

420

-2.0

-8.0

580

±50

.02

.56

3.0

-14

(Typ.)

VTB5051B

-40°C to 110°C

(14.8 mm

Max.

250

720

.08

)

cm Hz

Degrees

UNITS

mV/°C

%/°C

µA

/ W

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