VTB1013B PerkinElmer Optoelectronics, VTB1013B Datasheet

VTB1013B

Manufacturer Part Number

VTB1013B

Description

VTB Process Photodiodes

Manufacturer

PerkinElmer Optoelectronics

Datasheet

1.VTB1013B.pdf (1 pages)

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PRODUCT DESCRIPTION

Small area planar silicon photodiode in a “flat”

window, dual lead TO-46 package. The package

incorporates an infrared rejection filter. Cathode

is common to the case. These diodes have very

high shunt resistance and have good blue

response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

SYMBOL

VTB Process Photodiodes

TC V

TC R

TC I

NEP

range

1/2

Short Circuit Current

Open Circuit Voltage

Dark Current

Shunt Resistance

Junction Capacitance

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

Temperature Coefficient

CHARACTERISTIC

H = 100 fc, 2850 K

2850 K

H = 100 fc, 2850 K

2850 K

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

TEST CONDITIONS

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

Min.

(See also VTB curves, pages 21-22)

330

0.8

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

2.4 x 10

5.3 x 10

VTB1012B

CHIP ACTIVE AREA: .0025 in

Typ.

420

-2.0

-8.0

580

±35

1.3

.02

.25

.31

-14

(Typ.)

CASE 17 TO-46 HERMETIC

(Typ.)

VTB1012B, 1013B

Max.

100

720

.08

inch (mm)

Min.

330

0.8

1.1 x 10

1.2 x 10

VTB1013B

-40°C to 110°C

(1.60 mm

Typ.

-8.0

420

-2.0

580

±35

1.3

.02

7.0

.31

-14

(Typ.)

)

Max.

720

.08

cm Hz

Degrees

UNITS

mV/°C

%/°C

µA

/ W

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