PBSS4140DPN NXP Semiconductors, PBSS4140DPN Datasheet - Page 4

• Manufacturer Part Number: PBSS4140DPN
• Description: 40 V low VCEsat NPN/PNP transistor
• Manufacturer: NXP Semiconductors

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Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2001 Dec 13
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
I
I
h
V
NPN transistor
h
V
V
R
f
C
PNP transistor
h
V
V
R
f
C
SYMBOL
amb
CBO
CEO
EBO
T
T
FE
FE
FE
CEsat
BEsat
BEon
BEsat
BEon
40 V low V
CEsat
c
CEsat
c
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
DC current gain
base-emitter saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
collector capacitance
DC current gain
base-emitter saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
NPN/PNP transistor
0.02.
V
V
V
V
V
I
I
I
V
V
I
V
I
V
V
V
V
V
I
V
I
V
f = 100 MHz
V
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CE
CB
CE
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 500 mA; I
= 1 A; I
= 500 mA; I
= 40 V; I
= 40 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
=10 V; I
= 10 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= 10 V; I
B
B
B
C
= 100 mA
= 100 mA
CONDITIONS
C
C
C
C
C
4
= 50 mA
E
E
B
E
C
C
C
C
= 0
= 1 mA
= 500 mA
= 1 A
= 1 A
B
B
B
= 50 mA; f = 100 MHz
C
E
= 0
= 0; T
= 0
= I
= 100 mA
= 500 mA
= 1 A
= 1 A
B
= 1 mA
= 50 mA
= 50 mA; note 1
= 50 mA;
= I
e
50 mA; note 1
e
= 0; f = 1 MHz
= 0; f =1 MHz
j
= 150 C
300
300
200
150
300
250
160
150
MIN.
PBSS4140DPN
260
300
TYP.
Product specification
100
50
100
100
200
250
500
900
1.2
1.1
<500
10
800
<500
12
MAX.
1.1
1.0
nA
nA
nA
mV
mV
mV
V
V
m
MHz
pF
V
V
m
MHz
pF
UNIT
A
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