BFG94 Philips Semiconductors, BFG94 Datasheet - Page 7

• Manufacturer Part Number: BFG94
• Description: NPN 6 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 6 GHz wideband transistor
G max
I
Fig.10 Maximum available stable gain as a
I
See test circuit, Fig.2
Fig.12 Second order intermodulation distortion as
(dB)
c
c
(dB)
d 2
= 20 mA; V
= 45 mA; V
20
15
10
20
40
60
80
0
5
10
10
function of frequency.
a function of collector current.
CE
CE
= 10 V; f
= 8 V.
10
(p q)
30
2
= 810 MHz.
10
50
3
f (MHz)
I
C
(mA)
MBB782
MBB794
10
70
4
7
handbook, halfpage
handbook, halfpage
V
G
G
I
See test circuit, Fig.2
Fig.13 Third order intermodulation distortion as a
c
gain
(dB)
(dB)
CE
max
UM
d 3
= 45 mA; V
Fig.11 Gain as a function of collector current.
= 8 V; f = 1 GHz.
30
20
10
= maximum unilateral power gain.
20
40
60
80
= maximum available stable gain.
0
10
0
function of collector current.
CE
= 10 V; f
10
(p q r)
30
20
= 793.25 MHz.
30
50
Product specification
G max
G UM
I
40
C
I
(mA)
C
MBB781
MBB795
(mA)
BFG94
50
70