BFG94 Philips Semiconductors, BFG94 Datasheet - Page 2

• Manufacturer Part Number: BFG94
• Description: NPN 6 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope. It is primarily
intended for use in communication
and instrumentation systems.
QUICK REFERENCE DATA
Note
1. T
September 1995
V
V
I
P
C
f
G
V
P
SYMBOL
C
T
High power gain
Low noise figure
Low intermodulation distortion
Gold metallization ensures
excellent reliability.
CBO
CEO
tot
O
L1
re
NPN 6 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
output voltage
output power at 1 dB gain
compression
PARAMETER
PINNING
PIN
1
2
3
4
emitter
base
emitter
collector
T
T
d
I
T
open emitter
open base
up to T
I
I
I
I
f = 800 MHz; T
C
C
C
C
C
im
amb
amb
amb
= 0; V
= 45 mA; V
= 45 mA; V
= 45 mA; V
= 45 mA; V
DESCRIPTION
= 60 dB; R
= 25 C
= 25 C
= 25 C
2
s
= 140 C (note 1)
CE
CONDITIONS
= 10 V; f = 1 MHz
CE
CE
CE
CE
amb
L
= 10 V; f = 1 GHz;
= 10 V; f = 1 GHz;
= 10 V;
= 10 V; f = 1 GHz;
= 75 ;
= 25 C
page
Top view
4
11.5
MIN. TYP. MAX. UNIT
Fig.1 SOT223.
1
Product specification
6
13.5
500
21.5
2
15
12
60
700
0.8
BFG94
4
MSB002 - 1
3
V
V
mA
mW
pF
GHz
dB
mV
dBm