BFG194 Siemens Semiconductor Group, BFG194 Datasheet - Page 3

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BFG194

Manufacturer Part Number
BFG194
Description
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)
Manufacturer
Siemens Semiconductor Group
Datasheet
2) G
Electrical Characteristics at T
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
Collector-emitter capacitance
V
Emitter-base capacitance
V
Noise figure
I
f = 900 MHz
f = 1.8 GHz
Power gain
I
Z
f = 900 MHz
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
f = 1.8 GHz
Semiconductor Group
C
C
C
C
L
CB
CE
EB
= 70 mA, V
= 20 mA, V
= 70 mA, V
= 70 mA, V
= Z
ma
= 0.5 V, V
= 10 V, V
= 10 V, V
Lopt
= | S
21
/ S
CE
CE
2)
CE
CE
BE
BE
CB
12
= 8 V, f = 500 MHz
= v
= v
= 8 V, Z
= 8 V, Z
= 8 V, Z
| (k-(k
= v
be
be
cb
= 0 , f = 1 MHz
= 0 , f = 1 MHz
2
= 0 , f = 1 MHz
-1)
S
S
S
= Z
= Z
= 50
1/2
)
Sopt
Sopt
A
= 25°C, unless otherwise specified.
3
Symbol
f
C
C
C
F
G
| S
T
cb
ce
eb
ma
21e
|
2
min.
-
-
-
-
-
-
-
-
-
3.5
Values
typ.
5
1.4
0.4
4.7
2.8
4.7
11
6.5
8
3
max.
-
-
-
-
-
-
-
-
-
2
Aug-22-1996
BFG 194
Unit
GHz
pF
dB

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