BFG194 Siemens Semiconductor Group, BFG194 Datasheet
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Manufacturer Part Number
BFG194
Description
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)
Manufacturer
Siemens Semiconductor Group
PNP Silicon RF Transistor
ESD: Electrostatic discharge sensitive device, observe handling precaution!
1) T
• For low distortion broadband amplifiers in
Type
BFG 194
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Semiconductor Group
antenna and telecommunications systems up
to 1.5 GHz at collector currents from 20mA
to 80mA
S
S
is measured on the collector lead at the soldering point to the pcb.
75 °C
Marking Ordering Code
BFG194 Q62702-F1321
1)
1
Symbol
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CBO
EBO
tot
thJS
Pin Configuration
1 = E
2 = B
3 = E
- 65 ... + 150
- 65 ... + 150
Values
1000
100
150
15
20
10
3
75
4 = C
Package
SOT-223
Aug-22-1996
BFG 194
Unit
V
mA
mW
°C
K/W
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BFG194 Summary of contents
... For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code BFG 194 BFG194 Q62702-F1321 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current ...
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base cutoff current Emitter-base cutoff current ...
Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 500 MHz C CE Collector-base capacitance MHz CB ...
Total power dissipation P * Package mounted on epoxy 1200 mW 1000 P tot 900 800 700 600 500 400 T A 300 200 100 Permissible Pulse Load thJS K/W ...
Collector-base capacitance 1MHz 3.0 2.5 2.0 1.5 1.0 0.5 0 Power Gain ...
Power Gain Parameter 12 I =70mA ...
Package Semiconductor Group 7 BFG 194 Aug-22-1996 ...
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