NE57810S Philipss, NE57810S Datasheet - Page 4

• Manufacturer Part Number: NE57810S
• Description: Advanced DDR memory termination power with external reference in
• Manufacturer: Philipss

1. Limits are 100% production tested at 25 C. Limits over the operating temperature range are guaranteed through correlation using Statistical
2. Ceramic capacitors only. Low ESR electrolytic capacitors are not necessary.
3. Voltage Accuracy referred to voltage at ExtRefIn pin.
4. RefOut voltage referenced to
5. V
Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
NOTE:
2003 Sep 12
amb
V
V
V
I
I
C
External Reference In
V
R
Reference Out
RefOut
IrefOut
C
Power Stage
I
T
Q
TT
lim
SYMBOL
ACC
V
lim
TT
DD
TT
Advanced DDR memory termination power
with external reference in
LOAD
in(ExtRefIn)
LOAD
Quality Control (SQC) methods.
TT
ACC
= 0 C to +75 C, V
= V
TT
– V
Output voltage
Output voltage accuracy (Note 5)
Supply voltage
Supply current
Output current
Load regulation
Load capacitance (Note 2)
Output voltage swing
Input impedance
Output voltage accuracy (Note 3)
Line regulation
Voltage reference out (Note 4)
Reference Out current max
Load capacitance
Current limit
Temperature shutdown
Temperature shutdown hysteresis
DD
/2.
DD
PARAMETER
= 2.5 V; I
1
/
2
V
TT
DD
= –3.5 A to +3.5 A, unless otherwise specified.
if ExtRefIn not connected.
ExtRefIn not connected
I
I
2.5 V
V
I
I
Stable operation
I
ExtRefIn = 1.25 V;
V
IrefOut = 0 A; source or sink
Stable operation
TT
TT
TT
TT
TT
DD
DD
= 0 A, ExtRefIn not connected
= 0 A
= 1.0 A
= 3.5 A
= 0 A
= 1.6 V
= 2.25 – 3.6 V
V
DD
CONDITIONS
3.6 V
4
MIN.
–3.5
–2.5
–15
–18
–15
–15
1.6
0.8
2.2
0.1
3.6
35
–6
–
–
–
–
–
–
ExtRefIn
V
+150
TYP.
100
DD
4.5
14
50
20
–
–
–
–
–
–
–
–
3
–
6
/2
V
DD
MAX.
+3.5
+2.5
NE57810
+15
+18
+15
+15
3.6
6.5
30
+6
–
–
–
–
–
–
–
–
– 0.8
Product data
UNIT
mV
mA
mV
mV
mV
mV
mV
mA
k
V
V
A
A
V
A
C
C
F
F