NE57810S Philipss, NE57810S Datasheet - Page 15

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NE57810S

Manufacturer Part Number
NE57810S
Description
Advanced DDR memory termination power with external reference in
Manufacturer
Philipss
Datasheet

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Philips Semiconductors
REVISION HISTORY
2003 Sep 12
Rev
_2
_1
Advanced DDR memory termination power
with external reference in
Date
20030912
20020716
Description
Product data (9397 750 11214). ECN 853-2359 29723 of 28 March 2003.
Supersedes data of 16 July 2002 (9397 750 10147).
Modifications:
Product data (9397 750 10147). ECN 853-2359 28625 of 17 July 2002.
Page 4, Electrical characteristics table:
– (description): from “T
– Output voltage accuracy: add symbol “V
– I
– I
– Output voltage accruacy: change Min. value from “–10” to “–15”; change Max. value from “+10” to “+15”.
– RefOut: add condition “IrefOut = 0 A; source or sink”; change Min. value from “–10” to “–15”;
– Change subheading row from “Protection” to “Power Stage”.
Modify Figure 12 on page 9.
change Max. value from “+10” to “+15”.
change Max. value from “+10” to “+15”.
Q
TT
: change Typ. value from “20” to “14”.
: change Condition from “V
amb
= 25 C” to “T
DD
= 2.25 – 3.6 V” to “2.5 V
15
amb
ACC
= 0 C to +70 C”
”; add Note 5; change Min. value from “–10” to “–15”;
V
DD
3.6 V”.
NE57810
Product data

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