BF545A Philips Semiconductors, BF545A Datasheet - Page 5

• Manufacturer Part Number: BF545A
• Description: N-channel silicon junction field-effect transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
1996 Jul 29
C
C
g
g
g
g
amb
SYMBOL
is
fs
rs
os
handbook, halfpage
N-channel silicon junction
field-effect transistors
is
rs
V
DS
Fig.3
= 25 C; unless otherwise specified.
I DSS
(mA)
= 15 V; T
30
20
10
0
0
Drain current as a function of gate-source
cut-off voltage; typical values.
j
= 25 C.
input capacitance
reverse transfer capacitance
common source input conductance V
common source transfer
conductance
common source reverse
conductance
common source output
conductance
2
PARAMETER
4
6
V GSoff (V)
MBB467
8
V
V
V
V
V
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
5
handbook, halfpage
V
D
D
D
D
D
D
D
D
GS
GS
GS
GS
DS
CONDITIONS
= 1 mA; f = 100 MHz
= 1 mA; f = 100 MHz
= 1 mA; f = 450 MHz
= 1 mA; f = 450 MHz
= 1 mA; f = 100 MHz
= 1 mA; f = 450 MHz
= 1 mA; f = 100 MHz
= 1 mA; f = 450 MHz
Fig.4
(mS)
Y fs
= 15 V; V
= 10 V; f = 1 MHz
= 0; f = 1 MHz
= 10 V; f = 1 MHz
= 0; f = 1 MHz
6
5
4
0
Forward transfer admittance as a
function of gate-source cut-off voltage;
typical values.
GS
BF545A; BF545B; BF545C
= 0; T
j
2
= 25 C.
4
1.7
3
0.8
0.9
15
300
2
1.8
30
60
6
40
Product specification
TYP.
6
V GSoff (V)
MBB466
pF
pF
pF
pF
mS
mS
S
S
S
S
S
S
UNIT
8