BF545A Philips Semiconductors, BF545A Datasheet - Page 3
BF545A
Manufacturer Part Number
BF545A
Description
N-channel silicon junction field-effect transistors
Manufacturer
Philips Semiconductors
Datasheet
1.BF545A.pdf
(12 pages)
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Part Number
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Quantity
Price
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
1996 Jul 29
V
V
V
I
P
T
T
G
SYMBOL
handbook, halfpage
stg
j
DS
GSO
GDO
tot
N-channel silicon junction
field-effect transistors
lead 10 mm
(mW)
P tot
400
300
200
100
0
0
Fig.2 Power derating curve.
drain-source voltage
gate-source voltage
gate-drain voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
2
.
50
PARAMETER
100
150
T amb ( C)
MBB688
open drain
open source
up to T
200
amb
3
= 25 C; note 1
CONDITIONS
BF545A; BF545B; BF545C
65
MIN.
10
250
150
150
Product specification
30
30
30
MAX.
V
V
V
mA
mW
C
C
UNIT