IPA030N10N3G Infineon Technologies, IPA030N10N3G Datasheet - Page 6

• Manufacturer Part Number: IPA030N10N3G
• Description: Power-Transistor
• Manufacturer: Infineon Technologies

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Rev. 2.1
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
7
6
5
4
3
2
1
0
DS
=f(T
-60
5
4
3
2
1
); V
0
j
); I
GS
-20
D
=0 V; f =1 MHz
=79 A; V
20
20
GS
98 %
T
=10 V
V
j
DS
60
[°C]
Ciss
Coss
40
Crss
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
-20
GS
=V
0.5
175 °C
DS
20
270 µA
25 °C
V
T
25 °C, 98%
SD
j
60
[°C]
1
[V]
2700 µA
IPA030N10N3 G
100
175 °C, 98%
1.5
140
2009-07-09
180
2