IPA030N10N3G Infineon Technologies, IPA030N10N3G Datasheet

Page 1

OptiMOS TM 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R • Very low on-resistance R • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal for high-frequency ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 3) Device ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...

Page 4

Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited by on-state resistance ...

Page 5

Typ. output characteristics I =f =25 ° parameter 250 10 V 5.5 V 200 150 100 Typ. transfer characteristics I =f |>2 ...

Page 6

Drain-source on-state resistance DS(on -60 - Typ. capacitances C =f MHz ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS 110 105 100 www.DataSheet4U.com 95 90 -60 ...

Page 8

PG-TO220-FP www.DataSheet4U.com Rev. 2.1 page 8 IPA030N10N3 G 2009-07-09 ...

Page 9

... Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...