RFP2N20L Intersil Corporation, RFP2N20L Datasheet - Page 3

• Manufacturer Part Number: RFP2N20L
• Description: 2A/ 200V/ 3.500 Ohm/ Logic Level/ N-Channel Power MOSFET
• Manufacturer: Intersil Corporation

Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
0.01
1.2
1.0
0.8
0.6
0.4
0.2
4
3
2
1
0
0.1
10
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
0
0
1
0
1
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
OPERATION IN THIS AREA
LIMITED BY r
DS
FIGURE 5. TRANSFER CHARACTERISTICS
= 15V
TEMPERATURE
25
1
V
V
DS
GS
DS(ON)
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
125
T
C
50
10
, CASE TEMPERATURE (
o
C
6-258
2
75
-40
3
o
100
C
100
Unless Otherwise Specified
T
T
J
C
o
= MAX RATED
C)
= 25
125
4
125
o
o
25
C
-40
C
o
o
C
C
1000
150
RFP2N20L
5
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
2.5
1.5
0.5
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
3
2
1
0
0
0
25
5
4
3
2
1
0
0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
FIGURE 4. SATURATION CHARACTERISTICS
C
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
= 25
GS
1
= 5V
CASE TEMPERATURE
CURRENT
o
C
50
V
DS,
T
2
1
C
DRAIN TO SOURCE VOLTAGE (V)
, CASE TEMPERATURE (
I
D,
DRAIN CURRENT (A)
75
3
125
o
2
C
4
V
100
GS
25
= 10V
o
5
C
o
C)
3
125
6
V
V
V
V
-40
GS
GS
GS
GS
o
= 5V
= 3V
= 4V
C
= 2V
7
150
4