HAT1021 Hitachi Semiconductor, HAT1021 Datasheet - Page 5

• Manufacturer Part Number: HAT1021
• Description: Silicon P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

500
200
100
–10
–20
–30
–40
–50
50
20
10
–0.1
5
0
0
V
I
Reverse Drain Current
DS
–0.2
D
Dynamic Input Characteristics
= –5.5 A
V
Body–Drain Diode Reverse
8
DD
Gate Charge
= –20 V
–0.5
Recovery Time
–10 V
V
–5 V
16
DD
di / dt = 20 A / µs
V
–1
GS
= –5 V
–10 V
–20 V
= 0, Ta = 25 °C
24
V
–2
Qg (nc)
GS
I
DR
32
–5
(A)
–10
40
0
–2
–4
–6
–8
–10
10000
3000
1000
300
100
500
200
100
30
10
50
20
10
–0.1
5
0
Drain to Source Voltage V
–0.2
–4
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
–0.5
V
PW = 3 µs, duty < 1 %
r t
GS
–8
= –4 V, V
–1
t
d(off)
–12
t
d(on)
t f
–2
I
D
HAT1021R
DD
V
f = 1 MHz
Coss
Crss
Ciss
(A)
-16
GS
DS
= –10 V
–5
= 0
(V)
–20
–10
5