HAT1021 Hitachi Semiconductor, HAT1021 Datasheet

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HAT1021

Manufacturer Part Number
HAT1021
Description
Silicon P Channel Power MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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Features
Outline
Low on-resistance
Capable of 2.5 V gate drive
Low drive current
High density mounting
Silicon P Channel Power MOS FET
High Speed Power Switching
SOP–8
G
4
HAT1021R
S S S
1 2 3
D
5 6 7 8
D D D
8
7
6
5
1, 2, 3
4
5, 6, 7, 8 Drain
1 2
3 4
Source
Gate
ADE-208-475 D (Z)
February 1999
5th. Edition

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HAT1021 Summary of contents

Page 1

... Silicon P Channel Power MOS FET Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline HAT1021R High Speed Power Switching SOP– Drain ADE-208-475 D (Z) ...

Page 2

... HAT1021R Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current I Channel dissipation Channel temperature Storage temperature Note duty cycle 2. When using the glass epoxy board (FR4 1.6 mm), PW 10s ...

Page 3

... V –40 Pulse Test –3.5 V –30 –3 V –20 –2.5 V –10 – –6 –8 –10 V (V) DS HAT1021R Maximum Safe Operation Area 10 µs 100 µs Operation in this area is limited by R DS(on °C 1 shot pulse –0.3 –1 –3 –10 –30 Drain to Source Voltage V ...

Page 4

... HAT1021R Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.5 –0.4 –0.3 –0.2 –0.1 0 –2 –4 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.20 0.16 0. –2 0.08 0.04 – – Case Temperature 4 Pulse Test 0.5 0.2 0 – 0.05 –2 A 0.02 –1 A 0.01 –6 –8 –10 ...

Page 5

... I (A) DR Drain to Source Voltage V 500 0 200 –2 100 –4 50 –6 20 –8 10 – –0.1 HAT1021R Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss MHz –4 –8 –12 -16 DS Switching Characteristics t d(off d(on – –10 V ...

Page 6

... HAT1021R Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 0.0001 10 µ 100 µ 6 Reverse Drain Current vs. Source to Drain Voltage –50 Pulse Test – – –30 –20 –10 0 –0.4 –0.8 –1.2 Source to Drain Voltage 100 m 1 Pulse Width PW ( – ...

Page 7

... Switching Time Test Circuit Vout Vin Monitor Monitor D.U. Vin –10 V –4 V Switching Time Waveform Vin 10% 90% 10% Vout td(off) td(on) tr HAT1021R 90% 90% 10 ...

Page 8

... HAT1021R Package Dimensions 5.0 Max 1.27 0.51 Max 8 6.2 Max 1.27 Max 0.15 0.25 M Unit – 8 Hitachi code FP–8DA — EIAJ MS-012AA JEDEC ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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