SSM5G09TU Toshiba Semiconductor, SSM5G09TU Datasheet - Page 4
SSM5G09TU
Manufacturer Part Number
SSM5G09TU
Description
DC-DC Converter
Manufacturer
Toshiba Semiconductor
Datasheet
1.SSM5G09TU.pdf
(10 pages)
Schottky Diode
Electrical Characteristics
Precaution
Forward voltage
Reverse current
Total capacitance
the other switching diodes. This current leakage and not proper operating temperature or voltage may cause
thermal runaway. Be sure to take forward and reverse loss into consideration when you design.
The schottky barrier diode of this product are having large-reverse-current-leakage characteristic compare to
Characteristic
(Ta = 25°C)
Symbol
V
V
F (1)
F (2)
C
I
R
T
I
I
V
V
F
F
R
R
= 0.3 A
= 0.5 A
= 12 V
= 0 V, f = 1 MHz
4
Test Condition
Min
⎯
⎯
⎯
⎯
Typ.
0.33
0.37
80
⎯
SSM5G09TU
www.DataSheet4U.com
2007-11-01
Max
0.39
0.43
100
⎯
Unit
μA
pF
V
V