SSM5G09TU Toshiba Semiconductor, SSM5G09TU Datasheet - Page 3

• Manufacturer Part Number: SSM5G09TU
• Description: DC-DC Converter
• Manufacturer: Toshiba Semiconductor

MOSFET
Electrical Characteristics
Switching Time Test Circuit
Precaution
100 μA for this product. For normal switching operation, V
requires a lower voltage than V
V
Be sure to take this into consideration when using the device.
−2.5 V
(a) Test circuit
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note 4: Pulse measurement
th
can be expressed as the voltage between the gate and source when the low operating current value is I
0
10 μs
Characteristic
IN
Turn-on time
Turn-off time
th
V
. (The relationship can be established as follows: V
DD
(Ta = 25°C)
OUT
V
V
R
V
R
Duty < = 1%
V
Common source
Ta = 25°C
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DD
IN
G
I
I
C
C
|Y
C
GSS
DSS
V
t
t
oss
on
off
: t
iss
rss
= 4.7 Ω
th
fs
= −10 V
r
|
, t
f
< 5 ns
V
I
I
V
V
V
I
I
V
V
V
V
V
D
D
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
= −1 mA, V
= −1 mA, V
= −0.75 A, V
= −0.75 A, V
3
= ±8 V, V
= −12 V, V
= −3 V, I
= −3 V, I
= −10 V, V
= −10 V, V
= −10 V, V
= −10 V, I
= 0~−2.5 V, R
GS (on)
(b) V
(c) V
Test Condition
D
D
GS
GS
DS
D
requires a higher voltage than V
GS
GS
GS
= −0.1 mA
= −0.75 A
GS
GS
GS
OUT
= −0.75 A
IN
= 0
= +8 V
= 0
= −4 V
= −2.5 V (Note 4)
G
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 4.7 Ω
0 V
−2.5 V
V
V
DS (ON)
DD
(Note 4)
(Note 4)
GS (off)
−0.5
1.75
−12
Min
−4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
10%
on
< V
t
Typ.
th
100
130
550
155
170
r
3.5
34
28
⎯
⎯
⎯
⎯
⎯
10%
90%
SSM5G09TU
< V
www.DataSheet4U.com
th
GS (on).
and V
2007-11-01
Max
−1.1
130
200
90%
t
±1
−1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
off
GS (off)
t
f
)
D
Unit
mΩ
μA
μA
pF
pF
pF
ns
=
V
V
S