TF28F008SA-100 Intel Corporation, TF28F008SA-100 Datasheet - Page 27

no-image

TF28F008SA-100

Manufacturer Part Number
TF28F008SA-100
Description
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
Manufacturer
Intel Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TF28F008SA-100
Manufacturer:
INTEL
Quantity:
5 530
Part Number:
TF28F008SA-100
Manufacturer:
INTEL
Quantity:
5 530
Part Number:
TF28F008SA-100
Manufacturer:
HITACHI
Quantity:
5
BLOCK ERASE AND BYTE WRITE PERFORMANCE
NOTES
1 25 C 12 0 V
2 Excludes System-Level Overhead
3 Contact your Intel representative for information on the maximum byte write specification
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICS Write Operations
NOTES
1 Read timing characteristics during erase and byte write operations are the same as during read-only operations Refer to
AC Characteristics for Read-Only Operations
2 Sampled not 100% tested
3 Refer to Table 3 for valid A
4 Refer to Table 3 for valid D
5 The on-chip Write State Machine incorporates all byte write and block erase system functions and overhead of standard
Intel flash memory including byte program and verify (byte write) and block precondition precondition verify erase and
erase verify (block erase)
6 Byte write and block erase durations are measured to completion (SR 7
V
7 See High Speed AC Input Output Reference Waveforms and High Speed AC Testing Load Circuits for testing characteris-
tics
8 See AC Input Output Reference Waveforms and AC Testing Load Circuits for testing characteristics
Block Erase Time
Block Write Time
Byte Write Time
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
PPH
AVAV
PHWL
ELWL
WLWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHQV1
WHQV2
WHGL
QVVL
Symbol
until determination of byte write block erase success (SR 3 4 5
t
t
t
t
t
t
t
t
t
t
t
t
WC
PS
CS
WP
VPS
AS
DS
DH
AH
CH
WPH
VPH
Parameter
PP
Write Cycle Time
RP
CE
WE
V
Address Setup to WE
Data Setup to WE
Data Hold from WE
Address Hold from WE
CE
WE
WE
Duration of Byte Write Operation
Duration of Block Erase Operation
Write Recovery before Read
V
PP
PP
Setup to WE
Hold from Valid SRD RY BY
High Recovery to WE
Setup to WE
Hold from WE
Pulse Width
Pulse Width High
High to RY BY
Versions
IN
IN
for byte write or block erasure
for byte write or block erasure
Going High
Parameter
Going High
Going Low
High
High
Notes
Going Low
Going High
High
2
2
Going Low
Min
High
28F008SA-85
Typ
1 6
0 6
8
(1)
(1)
V
CC g
e
(Note 3)
Notes
0)
Max
10%
5 6
5 6
2 6
2 1
10
2
2
3
4
e
1 RY BY
Min
Min
100
100
0 3
10
40
40
40
10
30
1
5
5
6
0
0
28F008SA-100
28F008SA-120
e
Typ
V
1 6
0 6
OH
8
(1)
) V
PP
(Note 3)
(8)
Max
100
should be held at
Max
2 1
10
28F008SA
Unit
sec
sec
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
s
s
27

Related parts for TF28F008SA-100