CY23EP09 Cypress Semiconductor, CY23EP09 Datasheet - Page 3

• Manufacturer Part Number: CY23EP09
• Description: 9-Output Zero Delay Buffer
• Manufacturer: Cypress Semiconductor

Document #: 38-07760 Rev. *B
Absolute Maximum Conditions
Supply Voltage to Ground Potential ................. –0.5V to 4.6V
DC Input Voltage...................................... V
Operating Conditions
3.3V DC Electrical Specifications
V
V
T
C
C
BW
R
t
Theta Ja
Theta Jc
V
V
V
I
I
V
V
I
I
Notes:
PU
IL
IH
DD
DD
5. Applies to Test Circuit #1.
6. Applies to both REF Clock and internal feedback path on CLKOUT.
7. Theta Ja, EIA JEDEC 51 test board conditions, 2S2P; Theta Jc Mil-Spec 883E Method 1012.1.
A
DD3.3
DD2.5
DD
IL
IH
OL
OH
L
IN
OUT
[5]
Parameter
Parameter
(PD mode)
[7]
[7]
3.3V Supply Voltage
2.5V Supply Voltage
Operating Temperature (Ambient Temperature)—Commercial
Operating Temperature (Ambient Temperature)—Industrial
Load Capacitance, <100 MHz, 3.3V
Load Capacitance, <100 MHz, 2.5V with High drive
Load Capacitance, <133.3 MHz, 3.3V
Load Capacitance, <133.3 MHz, 2.5V with High drive
Load Capacitance, <133.3 MHz, 2.5V with Standard drive
Load Capacitance, >133.3 MHz, 3.3V
Load Capacitance, >133.3 MHz, 2.5V with High drive
Input Capacitance
Closed-loop bandwidth (typical), 3.3V
Closed-loop bandwidth (typical), 2.5V
Output Impedance (typical), 3.3V High drive
Output Impedance (typical), 3.3V Standard drive
Output Impedance (typical), 2.5V High drive
Output Impedance (typical), 2.5V Standard drive
Power-up time for all VDD’s to reach minimum specified voltage
(power ramps must be monotonic)
Dissipation, Junction to Ambient, 16-pin SOIC
Dissipation, Junction to Ambient, 16-pin TSSOP
Dissipation, Junction to Case, 16-pin SOIC
Dissipation, Junction to Case, 16-pin TSSOP
Supply Voltage
Input LOW Voltage
Input HIGH Voltage
Input Leakage Current
Input HIGH Current
Output LOW Voltage
Output HIGH Voltage
Power Down Supply Current REF = 0 MHz (Commercial)
Supply Current
Description
[6]
SS
Description
– 0.5V to 4.6V
0 < V
V
I
I
I
I
REF = 0 MHz (Industrial)
Unloaded outputs, 66-MHz REF
OL
OL
OH
OH
IN
= 8 mA (standard drive)
= 12 mA (High drive)
= V
= –8 mA (standard drive)
= –12 mA (High drive)
IN
DD
< V
IL
Test Conditions
Storage Temperature .................................... –65°C to 150°C
Junction Temperature .................................................. 150°C
Static Discharge Voltage
(per MIL-STD-883, Method 3015.............................. > 2000V
Min.
0.01
–40
3.0
2.3
0
–
–
–
–
–
–
–
–
1–1.5
0.8
29
41
37
41
95
70
58
48
Min.
3.0
2.0
2.4
2.4
–
–
–
–
–
–
–
–
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Max.
3.6
2.7
70
85
22
15
15
30
30
22
15
50
5
V
CY23EP09
DD
Max.
±10
100
3.6
0.8
0.4
0.4
12
25
30
–
–
+0.3
Page 3 of 13
°C/W
°C/W
°C/W
°C/W
Unit
MHz
MHz
ms
pF
pF
pF
pF
pF
pF
pF
pF
°C
°C
Ω
Ω
Ω
Ω
V
V
Unit
mA
µA
µA
µA
µA
V
V
V
V
V
V
V