NGB15N41CL ON Semiconductor, NGB15N41CL Datasheet - Page 5

• Manufacturer Part Number: NGB15N41CL
• Description: Ignition IGBT
• Manufacturer: ON Semiconductor

2.5
1.5
0.5
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1.8
30
25
20
15
10
3
2
1
0
5
0
2
1
0
−50
−50
3
Figure 7. Collector−to−Emitter Voltage versus
−30
−25
Figure 11. Typical Open Secondary Latch
Figure 9. Gate Threshold Voltage versus
L = 3 mH
L = 6 mH
4
GATE TO EMITTER VOLTAGE (VOLTS)
−10
Mean − 4 σ
Mean + 4 σ
Current versus Temperature
0
I
L = 2 mH
I
C
C
Gate−to−Emitter Voltage
= 10 A
= 5 A
5
I
10
C
TEMPERATURE (°C)
25
= 15 A
TEMPERATURE (°C)
Temperature
30
6
50
50
75
Mean
7
70
100
90
8
V
V
R
T
CC
GE
G
125
J
110
= 1000 Ω
= 150°C
= 50 V
= 5 V
9
150
130 150
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175
10
5
10000
1000
100
10
30
25
20
15
10
12
10
1
0
5
0
8
6
4
2
0
−50
−50
0
V
Figure 10. Minimum Open Secondary Latch
CE
−30
V
V
R
I
L = 300 μH
−25
C
20
Figure 12. Inductive Switching Fall Time
CC
GE
G
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
= 10 A
= 1000 Ω
L = 2 mH
= 300 V
= 5 V
L = 6 mH
−10
Figure 8. Capacitance Variation
40
C
Current versus Temperature
C
C
0
iss
oss
rss
10
60
versus Temperature
TEMPERATURE (°C)
25
TEMPERATURE (°C)
80
30
L = 3 mH
50
100
50
t
75
f
t
d(off)
120
70
100
140
90
V
V
R
CC
GE
G
125
110
160
= 1000 Ω
= 50 V
= 5 V
150
130 150
180
200
175