NGB15N41CL ON Semiconductor, NGB15N41CL Datasheet

no-image

NGB15N41CL

Manufacturer Part Number
NGB15N41CL
Description
Ignition IGBT
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NGB15N41CLT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NGB15N41CLT4G
Manufacturer:
ON/安森美
Quantity:
20 000
NGD15N41CL,
NGB15N41CL,
NGP15N41CL
Ignition IGBT
15 Amps, 410 Volts
N−Channel DPAK, D
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 7
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
ESD (Human Body Model)
ESD (Machine Model) R = 0 Ω, C = 200 pF
Total Power Dissipation @ T
Operating and Storage Temperature Range
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
Stress Applied to Load
Per Area
Microprocessor Devices
Ideal for Coil−on−Plug Applications
DPAK Package Offers Smaller Footprint and Increased Board Space
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy
Low Threshold Voltage to Interface Power Loads to Logic or
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
Pb−Free Packages are Available
@ T
R = 1500 Ω, C = 100 pF
Derate above 25°C
C
= 25°C − Pulsed
Rating
(T
J
= 25°C unless otherwise noted)
Preferred Device
C
G
= 25°C
) and Gate−Emitter Resistor (R
2
PAK and TO−220
Symbol
T
V
V
ESD
ESD
J
V
P
, T
CES
CER
I
GE
C
D
stg
www.DataSheet4U.com
−55 to
Value
+175
0.71
440
440
800
107
8.0
15
15
50
1
GE
Watts
W/°C
Unit
V
V
V
A
)
A
kV
°C
V
DC
DC
DC
DC
AC
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
See general marking information in the device marking
section on page 8 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
DEVICE MARKING INFORMATION
G
1 2
1
2
I
2
ORDERING INFORMATION
C
3
3
V
3
= 10 A, V
CE(on)
http://onsemi.com
410 VOLTS
R
4
4
15 AMPS
R
GE
G
4
3 2.1 V @
Publication Order Number:
GE
CASE 369C
CASE 221A
CASE 418B
TO−220AB
STYLE 2
STYLE 9
STYLE 4
DPAK
D
. 4.5 V
2
PAK
NGD15N41CL/D
C
E

Related parts for NGB15N41CL

NGB15N41CL Summary of contents

Page 1

... NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts 2 N−Channel DPAK, D PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required ...

Page 2

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Characteristic Single Pulse Collector−to−Emitter Avalanche Energy 5 16 1.8 mH, Starting 5.0 V, ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (continued) Collector−to−Emitter On−Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−On Delay Time Rise Time 3. ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted 25° COLLECTOR TO EMITTER VOLTAGE (VOLTS) CE Figure 1. Output Characteristics ...

Page 5

GATE TO EMITTER VOLTAGE (VOLTS) Figure 7. Collector−to−Emitter Voltage versus Gate−to−Emitter Voltage 2 ...

Page 6

Duty Cycle = 0.5 0.2 1 0.1 0.05 0.02 0.01 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 Figure 13. Transient Thermal Resistance (Non−normalized Junction−to−Ambient mounted on 4″ Figure 14. Test Fixture for Transient Thermal Curve (48 square inches of ...

Page 7

100 ms 0.1 0. COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 15. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at T 100 ms 0.05 1 ...

Page 8

... ORDERING INFORMATION Device NGD15N41CLT4 NGD15N41CLT4G NGB15N41CLT4 NGB15N41CLT4G NGP15N41CL NGP15N41CLG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DPAK CASE 369C STYLE 7 1 Gate YWW Collector Collector ...

Page 9

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 10

... M VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 11

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

Related keywords