RF2301 RF Micro Devices, RF2301 Datasheet - Page 3

• Manufacturer Part Number: RF2301
• Description: HIGH ISOLATION BUFFER AMPLIFIER
• Manufacturer: RF Micro Devices

Rev A8 010717
Pin
1
2
3
4
5
6
7
8
Function
RF OUT
RF IN
VDD2
VDD1
GND
GND
GND
GND
Description
Low inductance ground connections. Use individual vias to backside
ground plane, placed within 0.030" of pin landing for optimum perfor-
mance.
Same as pin 1.
DC-coupled RF input. A broadband impedance match is produced by
internal shunt resistive feedback. The DC level is 0V. If a DC voltage is
present from connected circuitry, an external DC-blocking capacitor is
required for the proper DC operating point.
Same as pin 1.
Same as pin 1.
Open drain RF output. A broadband impedance match is produced by
an external 100
Schematic 1. Approximately 3dB improvement in gain and output
power can be obtained over at least a 20% bandwidth by replacing the
resistor to power supply with an external chip inductor network as
shown in Application Schematic 2. An external DC-blocking capacitor is
required if the following circuitry is not DC-blocked.
Power supply connections. Bypass with external chip capacitor and
individual via to backside ground plane.
Power supply connections. Bypass with external chip capacitor and
individual via to backside ground plane.
resistor to power supply as shown in Application
Interface Schematic
RF IN
V
RF2301
DD1
V
DD2
RF OUT
4-39
4