RF2301 RF Micro Devices, RF2301 Datasheet - Page 2

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RF2301

Manufacturer Part Number
RF2301
Description
HIGH ISOLATION BUFFER AMPLIFIER
Manufacturer
RF Micro Devices
Datasheet

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4
4-38
Absolute Maximum Ratings
Supply Voltage (V
DC Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Overall
Nominal Frequency Range
Input IP
Noise Figure
Input VSWR
Output VSWR
Power Supply Voltage
Nominal 5V Configuration
Gain
P
Supply Current
Reverse Isolation
Nominal 3V Configuration
Gain
P
Supply Current
Reverse Isolation
1dB
1dB
RF2301
Output Power
Output Power
3
Parameter
Parameter
DD
)
Min.
21
10
15
-0.5 to +6.5
-40 to +150
-40 to +85
Rating
Specification
+10
60
300 to 2500
2.7 to 6.0
Typ.
<2:1
<2:1
24
+4
30
50
50
40
40
17
14
50
50
40
40
-8
0
Max.
Unit
dBm
V
mA
°C
°C
40
26
DC
8
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
MHz
dBm
dBm
dBm
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
V
T=25°C, V
In a 50
In a 50
Using Broad Band Application Circuit,
V
900MHz, without RF input
900MHz, with RF input, saturated
2500MHz, without RF input
2500MHz, with RF input, saturated
Using Broad Band Application Circuit,
V
900MHz, without RF input
900MHz, with RF input, saturated
2500MHz, without RF input
2500MHz, with RF input, saturated
Caution! ESD sensitive device.
DD
DD
=5V
=3V
DC
DC
system
system
DD
, Freq=2500MHZ, T=25°C
, Freq=2500MHZ, T=25°C
=5V
Condition
DC
Rev A8 010717

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