TPC8010-H Toshiba Semiconductor, TPC8010-H Datasheet - Page 5

• Manufacturer Part Number: TPC8010-H
• Description: Field Effect Transistor
• Manufacturer: Toshiba Semiconductor

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5000
3000
1000
500
300
100
1.6
1.2
0.8
0.4
25
20
15
10
50
30
10
5
0
2
0
0.1
80
0
Common source
V GS
f
Ta
(1)
(2)
V GS
1 MHz
25°C
0.3
0 V
40
Drain-source voltage V
4.5 V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
0.5
10
50
Capacitance – V
0
1
R
DS (ON)
P
D
I D
100
40
3
– Ta
(1) Device mounted on a
(2) Device mounted on a
t
11, 5.5, 2.5 A
5
– Ta
10 s
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
I D
80
10
DS
DS
11, 5.5, 2.5 A
Common source
Pulse test
150
(V)
120
30
C iss
C oss
C rss
50
160
100
200
5
100
0.1
2.5
1.5
0.5
10
40
30
20
10
1
2
1
0
0
0
80
0
12
Common source
V DS
I D
Pulse test
6
Common source
I D
Ta
Pulse test
V DD
Dynamic Input/Output Characteristics
1 mA
11 A
25°C
10 V
0.2
40
24 V
Drain-source voltage V
Ambient temperature Ta (°C)
V DS
Total gate charge Q
1
10
0.4
0
I
DR
V
th
1
V GS
– V
40
10
0.6
5
– Ta
3
DS
6
g
0.8
80
12
DS
V DD
Common source
Ta
Pulse test
(nC)
V GS
15
(V)
25°C
24 V
TPC8010-H
120
0 V
1
2002-03-12
160
20
1.2
16
12
8
4
0