TPC8010-H Toshiba Semiconductor, TPC8010-H Datasheet - Page 3

• Manufacturer Part Number: TPC8010-H
• Description: Field Effect Transistor
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta
25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
Q
Q
I
I
C
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
on
off
oss
t
t
gs1
SW
rss
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
GS
3
(Ta
10 mA, V
10 mA, V
10 V
11 A, V
0 V
30 V, V
10 V, I
4.5 V, I
10 V, I
10 V, I
10 V, V
24 V, V
24 V, V
24 V, V
1%, t
16 V, V
Test Condition
Test Condition
25°C)
w
D
D
D
GS
GS
GS
GS
D
GS
GS
GS
GS
DS
10 s
1 mA
5.5 A
5.5 A
5.5 A
0 V
0 V
0 V
0 V, f
10 V, I
5 V, I
10 V, I
I
20 V
D
0 V
V
DD
5.5 A
D
D
D
1 MHz
15 V
V
11 A
OUT
11 A
11 A
Min
Min
1.1
5.5
30
15
1020
Typ.
Typ.
120
400
3.1
3.4
2.6
4.4
5.5
16
12
11
11
23
18
10
TPC8010-H
2002-03-12
Max
Max
2.3
10
25
16
44
1.2
10
Unit
Unit
m
pF
nC
ns
V
V
S
A
V
A
A