TPC6003 Toshiba Semiconductor, TPC6003 Datasheet - Page 5

• Manufacturer Part Number: TPC6003
• Description: Silicon N Channel MOS Type (U-MOSIII)
• Manufacturer: Toshiba Semiconductor

10000
3000
1000
300
100
2.5
1.5
0.5
50
40
30
20
10
30
10
0
−80
2
1
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
V GS = 4.5 V
0.3
−40
V GS = 10 V
Ambient temperature Ta (
Ambient temperature Ta (
Drain-source voltage V DS
40
I D = 1.5 A, 3 A
Capacitance
0
1
R
DS (ON)
P
D
40
80
3
– Ta
(1) Device mounted on a
(2) Device mounted on a
– Ta
– V
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
I D = 1.5 A, 3 A, 6 A
I D = 6 A
DS
80
10
120
°
°
C)
C)
120
30
C oss
C rss
C iss
160
100
160
5
100
0.3
0.1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
30
10
50
40
30
20
10
−80
3
1
0
0
0
0
Common source
I D = 6 A
Ta = 25°C
Pulse test
V DD = 24 V
Dynamic input/output characteristics
−40
12 V
−0.4
Drain-source voltage V DS (V)
Ambient temperature Ta (
6 V
8
Total gate charge Q g (nC)
0
−0.8
16
I
DR
V
th
– V
40
– Ta
DS
6 V
−1.2
12 V
24
80
V DD = 24 V
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
Ta = 25°C
Pulse test
°
C)
−1.6
32
120
2007-01-15
TPC6003
V GS
www.DataSheet4U.com
−2.0
160
40
25
20
15
10
5
0