TPC6003 Toshiba Semiconductor, TPC6003 Datasheet - Page 3

• Manufacturer Part Number: TPC6003
• Description: Silicon N Channel MOS Type (U-MOSIII)
• Manufacturer: Toshiba Semiconductor

Source-Drain Ratings and Characteristics
Pulse drain reverse current
Forward voltage (Diode)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
.
DD
Characteristics
= 24 V, T
(a)
ch
= 25°C (initial), L = 0.5 mH, R
(Note 1)
2510 ms*
FR-4
Symbol
V
I
DRP
DSF
I
DR
G
3
(Ta = 25°C)
= 6 A, V
= 25 Ω, I
Test Condition
GS
(b) Device mounted on a glass-epoxy board (b)
AR
= 0 V
⎯
= 3.0 A
(b)
Min
⎯
⎯
25.4 × 25.4 × 0.8
Typ.
FR-4
Unit: (mm)
⎯
⎯
2007-01-15
TPC6003
Max
−1.2
www.DataSheet4U.com
24
Unit
A
V