AT-32011 Agilent(Hewlett-Packard), AT-32011 Datasheet - Page 4

• Manufacturer Part Number: AT-32011
• Description: Low Current/ High Performance NPN Silicon Bipolar Transistor
• Manufacturer: Agilent(Hewlett-Packard)

AT-32011, AT-32033 Typical Performance
Figure 8. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
Figure 11. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
25
20
15
10
Figure 14. AT-32011 Noise Figure and
Associated Gain at V
I
Circuit, Figure 1. (Circuit Losses
De-embedded).
5
0
C
-50
-2.5
= 2 mA vs. Temperature in Test
7.5
2.5
20
15
10
10
-5
-5
5
0
5
0
0
0
TEMPERATURE (°C)
0.5
0.5
2 mA
5 mA
10 mA
20 mA
2 mA
5 mA
0
FREQUENCY (GHz)
FREQUENCY (GHz)
NF
1.0
1.0
Ga
CE
50
1.5
1.5
= 2 .7 V,
CE
CE
2.0
2.0
= 5 V.
= 1 V.
100
2.5
2.0
1.5
1.0
0.5
0
2.5
2.5
Figure 9. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
Figure 12. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
Figure 15. AT-32033 Noise Figure and
Associated Gain at V
I
Circuit, Figure 1. (Circuit Losses
De-embedded).
C
CE
CE
= 2 mA vs. Temperature in Test
25
20
15
10
20
15
10
= 5 V.
5
0
20
15
10
= 1 V.
5
0
-50
5
0
0
0
0.5
2 mA
5 mA
0.5
2 mA
5 mA
10 mA
20 mA
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
0
4-56
1.0
1.0
NF
Ga
CE
1.5
= 2 .7 V,
1.5
50
2.0
2.0
100
2.5
2.5
2.5
2.0
1.5
1.0
0.5
0
Figure 10. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
Figure 13. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
Figure 16. AT-32011 and AT-32033
Third Order Intercept vs. Frequency
and Bias at V
Tuning.
CE
CE
20
15
10
= 5 V.
= 1 V.
5
0
20
15
10
25
20
15
10
0
5
0
5
0
0
0
0.5
2 mA
5 mA
10 mA
20 mA
0.5
0.5
2 mA
5 mA
10 mA
20 mA
CE
2 mA
5 mA
FREQUENCY (GHz)
FREQUENCY (MHz)
FREQUENCY (GHz)
= 2 .7 V, with Optimal
1.0
1.0
1.0
1.5
1.5
1.5
2.0
2.0
2.0
2.5
2.5
2.5