AT-32011 Agilent(Hewlett-Packard), AT-32011 Datasheet - Page 3

• Manufacturer Part Number: AT-32011
• Description: Low Current/ High Performance NPN Silicon Bipolar Transistor
• Manufacturer: Agilent(Hewlett-Packard)

Characterization Information, T
Figure 2. AT-32011 and AT-32033
Minimum Noise Figure vs. Frequency
and Current at V
Figure 5. AT-32011 and AT-32033
Power at 1 dB Gain Compression vs.
Frequency and Current at V
Symbol
1.5
0.5
20
15
10
-5
|S
5
0
G
2
1
0
P
IP
0
0
21
1dB
1dB
|
3
E
2
0.5
0.5
2 mA
5 mA
10 mA
20 mA
FREQUENCY (GHz)
FREQUENCY (GHz)
Power at 1 dB Gain Compression (opt tuning)
Gain at 1 dB Gain Compression (opt tuning)
Output Third Order Intercept Point (opt tuning)
Gain in 50
CE
1.0
V
V
V
V
1
CE
CE
CE
CE
= 2.7 V.
= 2.7 V, I
= 2.7 V, I
= 2.7 V, I
= 2.7 V, I
1.5
Parameters and Test Conditions
1.5
CE
2.0
1 mA
2 mA
5 mA
10 mA
20 mA
System
2
= 2.7 V.
C
C
C
C
= 20 mA
= 20 mA
= 20 mA
= 2 mA
2.5
2.5
Figure 3. AT-32011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
Figure 6. AT-32011 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
20
15
10
= 2.7 V.
5
0
25
20
15
10
A
5
0
0
0
= 25 C
0.5
2 mA
5 mA
10 mA
20 mA
0.5
1 mA
2 mA
5 mA
10 mA
20 mA
FREQUENCY (GHz)
FREQUENCY (GHz)
CE
1.0
4-55
1.0
= 2.7 V.
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
1.5
1.5
2.0
2.0
2.5
2.5
Units
dBm
dBm
dB
dB
Figure 7. AT-32033 1 dB Compressed
Gain vs. Frequency and Current at
V
Figure 4. AT-32033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
CE
20
15
10
20
15
10
= 2.7 V.
5
0
5
0
0
0
AT-32011
0.5
0.5
1 mA
2 mA
5 mA
10 mA
20 mA
2 mA
5 mA
10 mA
20 mA
Typ.
16.5
13
24
13
FREQUENCY (GHz)
FREQUENCY (GHz)
CE
1.0
1.0
= 2.7 V.
1.5
1.5
AT-32033
Typ.
11.5
2.0
2.0
13
15
24
2.5
2.5